IXFB170N30P Description
+150 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g Advantages Low gate charge results in simple drive requirement Improved Gate, Avalanche and dynamic dv/dt ruggedness High power density Applications V 4.5 ±200 TJ = 125°C 25 1.5 18 V nA μA mA mΩ DC-DC coverters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC and DC motor control Uninterrupted power supplies...
IXFB170N30P Key Features
- Fast intrinsic diode
- Avalanche Rated
- Unclamped Inductive Switching (UIS) rated
- Very low Rth results high power dissipation
- Low RDS(ON) and QG
- Low package inductance
- ID25, Note 1
- VDSS, ID = 0.5
- ID25 Resistive Switching Times VGS = 10V, VDS = 0.5
- VDSS, ID =0.5