IXFB170N30P Datasheet | IXYS

Preliminary Technical Information Polar TM Power MOSFET Hi Per FETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = ≤ ≤ 300V 170A 18mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS d V/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ±20 ±30 170 75 500 85 5 20 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g Advantages - Low gate charge results in simple drive requirement - Improved Gate, Avalanche and dynamic dv/dt ruggedness - High power density Applications V 4.5 ±200 TJ = 125°C 25 1.5 18 V n A μA m A mΩ - DC-DC coverters - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - AC and DC motor control - Uninterrupted power supplies - High speed power switching applications Features - Fast intrinsic diode - Avalanche Rated - Unclamped Inductive Switching (UIS) rated - Very low Rth results high power dissipation - Low RDS(ON) and QG - Low package inductance (TAB) G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 1m A VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V Characteristic Values Min. Typ. Max. 300 2.5 VGS = 10V, ID =...