IXFB100N50Q3
IXFB100N50Q3 is HiperFET Power MOSFET Q3-Class manufactured by IXYS.
Advance Technical Information
Hiper FETTM Power MOSFET Q3-Class
N-Channel Enhancement Mode Fast Intrinsic Rectifier
VDSS ID25
RDS(on) trr
= = ≤ ≤
500V 100A 49mΩ 250ns
PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 100 300 100 5 50 1560 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb. g Advantages z z z z z z z
Tab D = Drain Tab = Drain
G = Gate S = Source
Features
Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
High Power Density Easy to Mount Space Savings
Applications z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.5 6.5 V V z z z z
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls
±200 n A 50 μA 2.5 m A 49 mΩ
VGS = 10V, ID = 0.5
- ID25, Note 1
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DS100309(03/11)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS 0.13 VGS = 10V, VDS = 0.5
- VDSS, ID = 0.5
- ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5
- VDSS, ID = 0.5
- ID25 RG = 0.5Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5
- ID25, Note 1 Characteristic Values Min. Typ. Max. 40 65 13.8 1690 177 0.12 40 20 50 15 255 110 115 S n F p F p F Ω ns ns ns ns n C n C n C 0.08 °C/W °C/W...
