IXFB100N50Q3 - HiperFET Power MOSFET Q3-Class

Features

Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space Savings.

IXYS Corporation

Datasheet Details

Part number	IXFB100N50Q3
Manufacturer	IXYS Corporation
File Size	159.43 KB
Description	HiperFET Power MOSFET Q3-Class
Datasheet	IXFB100N50Q3 Datasheet
Additional preview pages of the IXFB100N50Q3 datasheet.

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Full PDF Text Transcription

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Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 100A 49mΩ 250ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 100 300 100 5 50 1560 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb.

Published: May 30, 2011 |