Overview: Polar3TM HiPerFETTM Power MOSFET IXFB110N60P3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FC
Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C
TC = 25C 110 275
55 3
35
1890
-55 ... +150 150
-55 ... +150 A A
A J
V/ns
W
C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 30..120/6.7..27 N/lb 10 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • IDSS, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.0 5.0 V 200 nA 50 A 2.
