• Part: IXFB170N30P
  • Description: Polar Power MOSFET HiPerFET
  • Manufacturer: IXYS
  • Size: 145.46 KB
Download IXFB170N30P Datasheet PDF
IXFB170N30P page 2
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IXFB170N30P page 3
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IXFB170N30P Key Features

  • Fast intrinsic diode
  • Avalanche Rated
  • Unclamped Inductive Switching (UIS) rated
  • Very low Rth results high power dissipation
  • Low RDS(ON) and QG
  • Low package inductance
  • ID25, Note 1
  • VDSS, ID = 0.5
  • ID25 Resistive Switching Times VGS = 10V, VDS = 0.5
  • VDSS, ID =0.5