Overview: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS ID25 RDS(on) trr = = ≤ ≤ 300V 170A 18mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ±20 ±30 170 75 500 85 5 20 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g Advantages • Low gate charge results in simple drive requirement • Improved Gate, Avalanche and dynamic dv/dt ruggedness • High power density Applications V 4.5 ±200 TJ = 125°C 25 1.
