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IXFB170N30P - Polar Power MOSFET HiPerFET

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IXYS Corporation

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IXFB170N30P Polar Power MOSFET HiPerFET by IXYS Corporation - Datasheet Preview — Datasheet preview – IXFB170N30P

Datasheet Details

Part number	IXFB170N30P
Manufacturer	IXYS Corporation
File Size	145.46 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFB170N30P Datasheet
Additional preview pages of the IXFB170N30P datasheet.

Product details

Features

Fast intrinsic diode.
Avalanche Rated.
Unclamped Inductive Switching (UIS) rated.
Very low Rth results high power dissipation.
Low RDS(ON) and QG.
Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V Characteristic Values Min. Typ. Max. 300.

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Published: May 30, 2011 |