Datasheet4U Logo Datasheet4U.com

IXFB60N80P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

📥 Download Datasheet

Overview

www.DataSheet.co.kr PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 60N80P VDSS = 800 V ID25 = 60 A RDS(on) ≤ 140 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 800 800 ±30 ±40 60 150 30 100 5 20 1250 -55 ...

+150 150 -55 ...

Key Features

  • l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages l l l Plus 264TM package for clip or spring Space savings High power density Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXFB62N80Q3 Power MOSFET
IXFB100N50P Power MOSFET
IXFB100N50Q3 HiperFET Power MOSFET Q3-Class
IXFB110N60P3 Power MOSFET
IXFB120N50P2 PolarP2 HiPerFET Power MOSFET
IXFB132N50P3 Polar3 HiPerFET Power MOSFET
IXFB170N30P Polar Power MOSFET HiPerFET
IXFB300N10P Polar Power MOSFET HiPerFET
IXFB30N120P Polar HiPerFET Power MOSFET
IXFB38N100Q2 Power MOSFET