IXFH26N50P Key Features
- easy to drive and to protect Advantages z Easy to mount z Space savings z High power density
- Gate 2
- Drain 3
- Source Tab
IXFH26N50P is Avalanche Rated Fast Instrinsic Diode manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXFH26N50 | Power MOSFET |
| IXFH26N50Q | Power MOSFET |
| IXFH26N60P | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated |
| IXFH20N100P | Polar Power MOSFET HiPerFET |
| IXFH20N60 | (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet .. 500 3.0 5.0 ±100 25 250 230 V V nA µA µA.