IXFH26N50Q Description
+150 V V V V A A A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.
IXFH26N50Q Key Features
- Gate 2
- Drain 3
- Source Tab
IXFH26N50Q is Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXFH26N50 | Power MOSFET |
| IXFH26N50P | Avalanche Rated Fast Instrinsic Diode |
| IXFH26N60P | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated |
| IXFH20N100P | Polar Power MOSFET HiPerFET |
| IXFH20N60 | (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
+150 V V V V A A A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G S (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.