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IXFH26N50P - Avalanche Rated Fast Instrinsic Diode

Features

  • z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99276A(09/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 16 26 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 37.

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Datasheet Details

Part number IXFH26N50P
Manufacturer IXYS (now Littelfuse)
File Size 243.62 KB
Description Avalanche Rated Fast Instrinsic Diode
Datasheet download datasheet IXFH26N50P Datasheet
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PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = ≤ ≤ 500 V 26 A 230 mΩ 200 ns Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuos Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 26 78 26 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C TO-247 (IXFH) VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) 1.6 mm (0.062 in.
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