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IXFH67N10 Datasheet, IXYS Corporation

IXFH67N10 mosfets equivalent, hiperfet power mosfets.

IXFH67N10 Avg. rating / M : 1.0 rating-14

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IXFH67N10 Datasheet

Features and benefits

International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - eas.

Application

DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers A.

Image gallery

IXFH67N10 Page 1 IXFH67N10 Page 2 IXFH67N10 Page 3

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