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IXFK110N06 - HiPerFET Power MOSFETs

Download the IXFK110N06 datasheet PDF. This datasheet also covers the IXFK105N07 variant, as both devices belong to the same hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages.
  • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK105N07_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK100N65X2 Power MOSFET IXYS
IXFK120N20 Power MOSFET IXYS
IXFK120N25 HiPerFET Power MOSFETs IXYS
IXFK120N25P Power MOSFET IXYS
IXFK120N30T GigaMOS Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK110N07 HiPerFET Power MOSFETs
IXFK100N10 Power MOSFET
IXFK100N25 Power MOSFET
IXFK102N30P Polar MOSFETs
IXFK105N07 HiPerFET Power MOSFETs

Full PDF Text Transcription

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www.DataSheet4U.comTM HiPerFET Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 ID25 RDS(on) 6 mW 7 mW 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C N07 N06 N07 N06 Maximum Ratings 70 60 70 60 ±20 ±30 110 76 600 100 30 2 5 500 -55 ... +150 150 -55 ... +150 V V V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. Nm/lb.in.
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