IXFM15N60 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
- Part: IXFM15N60
- Manufacturer: IXYS (official site)
- Size: 115.82 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFM10N100 | Power MOSFET |
| IXFM11N80 | Power MOSFET |
| IXFM12N100 | Power MOSFET |
| IXFM13N50 | Power MOSFET |
| IXFM13N80 | Power MOSFET |
IXFM15N60 Description
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A A A mJ V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, G D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6.