* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFM35N30 Datasheet (670.14 KB)
IXFM35N30
IXYS Corporation
670.14 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 .
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