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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30
IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30
V DSS
300 V 300 V 300 V
I
D25
35 A 40 A 40 A
R DS(on)
100 mW 85 mW 88 mW
trr £ 200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
VDSS V
DGR
VGS VGSM ID25
IDM
I
AR
EAR dv/dt
P D
TJ TJM Tstg TL Md Weight
Symbol
V DSS
VGS(th) IGSS IDSS
RDS(on)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
35N30 40N30 35N30 40N30 35N30 40N30
.
IXFM35N30 Datasheet
