* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXFM67N10 Datasheet (94.18 KB)
IXFM67N10
IXYS Corporation
94.18 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V ID25 RDS.
📁 Related Datasheet
IXFM6N100 Power MOSFETs (IXYS)
IXFM6N90 Power MOSFETs (IXYS)
IXFM10N100 Power MOSFET (IXYS Corporation)
IXFM10N90 Power MOSFET (ETC)
IXFM10N90 Power MOSFETs (IXYS)
IXFM11N80 Power MOSFET (IXYS Corporation)
IXFM12N100 Power MOSFET (IXYS Corporation)
IXFM12N90 Power MOSFET (ETC)
IXFM12N90 Power MOSFETs (IXYS)
IXFM13N50 Power MOSFET (IXYS Corporation)
