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IXFQ24N50P2 Datasheet - IXYS Corporation

Power MOSFET

IXFQ24N50P2 Features

* z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 300 260 1.13/10 5.5 Advantages High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unles

IXFQ24N50P2 Datasheet (141.51 KB)

Preview of IXFQ24N50P2 PDF

Datasheet Details

Part number:

IXFQ24N50P2

Manufacturer:

IXYS Corporation

File Size:

141.51 KB

Description:

Power mosfet.
Advance Technical Information PolarP2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFQ24N50P2 VDSS ID.

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IXFQ24N50P2 Power MOSFET IXYS Corporation

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