* z z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120 /4.5..25 5 z z z N/lb g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain
IXFR44N80P Datasheet (121.04 KB)
IXFR44N80P
IXYS Corporation
121.04 KB
Power mosfet.
www.DataSheet4U.com PolarHV HiPerFET Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM IXFR.
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