IXFR44N80P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell
| Part Number | Description |
|---|---|
| IXFR44N50P | Power MOSFET |
| IXFR44N50Q | Power MOSFET |
| IXFR44N50Q | Power MOSFET |
| IXFR44N60 | Power MOSFET |
| IXFR40N50Q2 | HiPerFET Power MOSFETs |