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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFR40N50Q2
VDSS = 500 V = 29 A ID25 RDS(on) = 0.17 Ω
trr ≤ 250 ns
Maximum Ratings 500 500 ± 30 ± 40 29 160 40 50 2.5 20 320 -55 ... +150 150 -55 ... +150 300 22...130/5...30 5 V V V V A A A mJ J V/ns W °C °C °C °C N/lb.
IXFR40N50Q2 Datasheet
