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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFR40N90P
VDSS ID25
RDS(on) trr
= = ≤ ≤
900V 21A 230mΩ 300ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 900 900 ± 30 ± 40 21 80 20 1.5 15 300 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb.
IXFR40N90P Datasheet
