* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFR80N15Q Datasheet (65.34 KB)
IXFR80N15Q
IXYS Corporation
65.34 KB
Hiperfet power mosfets.
Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low.
📁 Related Datasheet
IXFR80N20Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFR80N50P Power MOSFET (IXYS)
IXFR100N25 HiPerFET Power MOSFETs (IXYS Corporation)
IXFR102N30P Polar HiPerFET Power MOSFET (IXYS)
IXFR10N100F HiPerFET Power MOSFETs (IXYS Corporation)
IXFR10N100Q N-Channel Power MOSFET (IXYS Corporation)
IXFR120N20 Power MOSFET (IXYS Corporation)
IXFR120N25P PolarHT HiPerFET Power MOSFET (IXYS)
IXFR12N100F HiPerFET Power MOSFETs (IXYS Corporation)
IXFR12N100Q N-Channel Power MOSFET (IXYS Corporation)
