Datasheet Details
| Part number | IXFR80N15Q |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 65.34 KB |
| Description | HiPerFET Power MOSFETs |
| Download | IXFR80N15Q Download (PDF) |
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| Part number | IXFR80N15Q |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 65.34 KB |
| Description | HiPerFET Power MOSFETs |
| Download | IXFR80N15Q Download (PDF) |
|
|
|
Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt IXFR 80N15Q VDSS = 150 V = 75 A ID25 RDS(on) = 22.5 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 75 320 80 45 1.5 5 310 -55 ...
+150 150 -55 ...
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending 1.6 mm (0.063 in.
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