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HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C Maximum Ratings 200 200 ±20 ±30 71 320 80 45 1.5 5 310 -55 ... +150 150 -55 ... +150 300 1.13/10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
IXFR80N20Q Datasheet
