IXFR80N20Q Description
+150 300 1.13/10 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 5 g VDSS ID25 RDS(on) = 200 V = 71 A = 28m W trr £ 200 ns ISOPLUS 247TM E153432 G D G = Gate S = Source D = Drain TAB = Drain.
IXFR80N20Q Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier