IXFR80N15Q Description
Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt IXFR 80N15Q VDSS = 150 V = 75 A ID25 RDS(on) = 22.5 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM.
IXFR80N15Q Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<30pF)