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Advanced Technical Information
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt
IXFR 80N15Q VDSS = 150 V = 75 A ID25 RDS(on) = 22.5 mW trr £ 200ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
www.DataSheet4U.net
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 75 320 80 45 1.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
Isolated backside*
G = Gate S = Source
D = Drain
* Patent pending
1.6 mm (0.063 in.
IXFR80N15Q Datasheet
