* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
IXFR80N20Q Datasheet (57.29 KB)
IXFR80N20Q
IXYS Corporation
57.29 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Low Qg, H.
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