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IXFT18N90P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFT18N90P datasheet PDF. This datasheet also includes the IXFH18N90P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFH18N90P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 18A 600mΩ 300ns TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 TO-268 PLUS220 types Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 18 36 9 800 15 540 -55 ...

+150 150 -55 ...

+150 300 260 1.13/10 11..65/2.5..14.6 6 4 4 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.

Key Features

  • z z z z G S D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) D = Drain TAB = Drain International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.0 6.0 ± 100 V V nA z z z High Power Density Easy.

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