IXFT18N100Q3
IXFT18N100Q3 is Power MOSFET manufactured by IXYS.
- Part of the IXFH18N100Q3 comparator family.
- Part of the IXFH18N100Q3 comparator family.
.Data Sheet.co.kr
Advance Technical Information
Hiper FETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT18N100Q3 IXFH18N100Q3
VDSS ID25
RDS(on)
= 1000V = 18A ≤ 660mΩ
TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g z z z z z
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 18 60 18 1.5 50 830 -55 ... +150 150 -55 ... +150 TO-247 (IXFH)
D (Tab) D = Drain Tab = Drain
G = Gate S = Source
Features
Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
300 260 1.13 / 10 4.0 6.0
Advantages z z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 4m A VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ±100 V V n A z
High Power Density Easy to Mount Space Savings
Applications z z z
25 μA 1.25 m A 660 mΩ z z
VGS = 10V, ID = 0.5
- ID25, Note 1
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100390(10/11)
Datasheet...
