IXFT18N90P Datasheet | IXYS

Polar TM Power MOSFET Hi Per FETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 18A 600mΩ 300ns TO-247 (IXFH) D (TAB) TO-268 (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d V/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 TO-268 PLUS220 types Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 18 36 9 800 15 540 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14.6 6 4 4 V V V V A A A m J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g g G = Gate S = Source Features z z z z G S D (TAB) PLUS220 (IXFV) D (TAB) PLUS220SMD (IXFV_S) D (TAB) D = Drain TAB = Drain International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.0 6.0 ± 100 V V n A z z z High Power Density Easy to Mount Space Savings Applications z 25 μA 1.5 m A 600 mΩ z z z z VGS = 10V, ID = 0.5 - ID25, Note 1 Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100057A(9/09) © 2009 IXYS CORPORATION, All Rights Reserved .Data Sheet.in IXFH18N90P IXFV18N90P IXFT18N90P IXFV18N90PS Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS (TO-247, PLUS220) 0.25 VGS = 10V, VDS = 0.5 - VDSS, ID =...