IXFT58N20Q Datasheet | IXYS

Features l l l 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.0 4.0 ±100 25 1 40 V V n A µA m A mΩ l l l IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 1999 IXYS All rights reserved 98523A (5/99) IXFH IXFT Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 24 34 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 870 280 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 Ω (External) 40 40 13 98 140 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 45 35 70 0.42 (TO-247) 0.25 S p F p F p F ns ns ns ns n C n C n C K/W K/W Terminals: 1 - Gate 3 - Source 1 2 3 58N20Q 58N20Q TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf VDS = 10 V; ID = 0.5 ID25, pulse test .. - Drain Tab - Drain Dim. Qg(on) Qgs Qgd Rth JC Rth CK Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 58 232 1.5 200 0.7 7 A A V ns µC A Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF =...