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IXYS Corporation

IXFV18N60P Datasheet Preview

IXFV18N60P Datasheet

PolarHV HiPerFET Power MOSFET

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PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
www.DataSheet4U.com
VDSS
ID25
RDS(on)
trr
=
=
600 V
18 A
400 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
V
DSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
TSOLD
Md
Weight
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
T
J
150°C,
R
G
=
5
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
TO-247
PLUS220 & PLUS220SMD
600 V
600 V
±30 V
±40 V
18 A
45 A
18 A
30 mJ
1.0 J
10 V/ns
360
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 2.5 mA
3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
400 mΩ
PLUS220 (IXFV)
D (TAB)
G
DS
D (TAB)
PLUS220SMD (IXFV...S)
G
S
D (TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99390E(03/06)




IXYS Corporation

IXFV18N60P Datasheet Preview

IXFV18N60P Datasheet

PolarHV HiPerFET Power MOSFET

No Preview Available !

IXFH 18N60P
IXFV 18N60P IXwwFwV.Da1ta8ShNee6t40UP.coSm
Symbol
gfs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
9 16
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
2500
280
23
pF
pF
pF
V = 10 V, V = 0.5 V , I = I
GS DS DSS D D25
R
G
= 5 Ω (External)
21 ns
22 ns
62 ns
22 ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
50 nC
15 nC
18 nC
(TO-247, PLUS220)
0.35 °C/W
0.21 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
I V =0V
S GS
18 A
ISM Repetitive
54 A
V I = I , V = 0 V, Note 1
SD F S GS
1.5 V
trr IS = 18 A, -di/dt = 100 A/μs
Q V = 100 V, V = 0 V
RM R GS
F
RM
200 ns
0.8 μC
5A
TO-247 (IXFH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
Note 1: Pulse test, t 300 μs, duty cycled 2 %
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2


Part Number IXFV18N60P
Description PolarHV HiPerFET Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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