* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Battery chargers z Switched-mode
IXFX20N120 Datasheet (584.80 KB)
IXFX20N120
IXYS Corporation
584.80 KB
Hiperfet power mosfets.
Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 20N120 IXFX 20N120 VDSS ID25 RDS(on) = 1200 V = 20 A = 0.75 Ω trr ≤ 300 ns Symbol .
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