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IXYS Corporation

IXFX40N90P Datasheet Preview

IXFX40N90P Datasheet

Polar Power MOSFET HiPerFET

No Preview Available !

Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK40N90P
IXFX40N90P
VDSS =
ID25 =
RDS(on)
trr
900V
40A
210mΩ
300ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXFK)
Mounting force (IXFX)
TO-264
TO-247
Maximum Ratings
900
900
± 30
± 40
40
80
20
1.5
V
V
V
V
A
A
A
J
15
960
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VGS = 0V, ID = 3mA
900 V
VDS = VGS, ID = 1mA
3.5 6.5 V
VGS = ± 30V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
± 200 nA
50 μA
3.5 mA
210 mΩ
TO-264 (IXFK)
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Avalanche Rated
z Low package inductance
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
© 2008 IXYS CORPORATION,All rights reserved
www.DataSheet.in
DS100061(10/08)




IXYS Corporation

IXFX40N90P Datasheet Preview

IXFX40N90P Datasheet

Polar Power MOSFET HiPerFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
18 30
S
RGi Gate input resistance
1.5 Ω
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
14 nF
896 pF
58 pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
53
50
77
46
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
230
70
100
nC
nC
nC
RthJC
RthCS
0.13 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS VGS = 0V
40 A
ISM Repetitive, pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1
160 A
1.5 V
trr
QRM
IRM
IF = 20A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
300
1.7
14
ns
μC
A
IXFK40N90P
IXFX40N90P
TO-264 (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
PLUS 247TM (IXFX) Outline
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
www.DataSheet.in


Part Number IXFX40N90P
Description Polar Power MOSFET HiPerFET
Maker IXYS Corporation
Total Page 4 Pages
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