Datasheet4U Logo Datasheet4U.com

IXFX52N60Q2 - Power MOSFET

Download the IXFX52N60Q2 datasheet PDF. This datasheet also covers the IXFK52N60Q2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z VGS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK52N60Q2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX52N100X Power MOSFET IXYS
IXFX55N50F Power MOSFET IXYS
IXFX100N65X2 Power MOSFET IXYS
IXFX120N20 Power MOSFET IXYS
IXFX120N25 HiPerFET Power MOSFETs IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFX50N50 Power MOSFETs
IXFX55N50 Power MOSFETs
IXFX100N25 Power MOSFET
IXFX150N15 Power MOSFET
IXFX180N10 Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFK 52N60Q2 IXFX 52N60Q2 VDSS ID25 RDS(on) = = = 600 V 52 A 115 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 52 208 52 75 4.0 20 735 -55 ... +150 150 -55 ...
Published: |