* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXFX62N25 Datasheet (119.39 KB)
IXFX62N25
IXYS Corporation
119.39 KB
Hiperfet power mosfet.
Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 62N25 IXFK 62N25 VDSS ID25 RDS(on) = 250 V = 62 .
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