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IXFX94N50P2 - Power MOSFET

Download the IXFX94N50P2 datasheet PDF. This datasheet also covers the IXFK94N50P2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Fast Intrinsic Diode z Dynamic dv/dt Rating z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK94N50P2-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Polar2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK94N50P2 IXFX94N50P2 VDSS = ID25 = RDS(on) ≤ 500V 94A 55mΩ TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 500 500 V V ± 30 V ± 40 V 94 A 240 A 94 A 3.5 J 1300 W 30 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 20..120 /4.5..27 °C °C Nm/lb.in. N/lb.