IXGH24N60BU1 Description
HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol .. Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 V V V V A A A A W °C °C °C.
IXGH24N60BU1 Key Features
- High frequency IGBT and antiparallel
- High current handling capability
- 3rd generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity FRED in one package