* G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB) VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD
* High frequency IGBT and antiparallel
* High current handling capability
* 3rd generation HDMOSTM process
* MOS Gate turn-on -
IXGH24N60BU1 Datasheet (170.14 KB)
IXGH24N60BU1
IXYS Corporation
170.14 KB
Hiperfast igbt.
HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 2.
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