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IXGH24N60BU1 - HiPerFAST IGBT

Key Features

  • G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB) VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD.
  • High frequency IGBT and antiparallel.
  • High current handling capability.
  • 3rd generation.

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Full PDF Text Transcription for IXGH24N60BU1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGH24N60BU1. For precise diagrams, and layout, please refer to the original PDF.

HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to...

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ol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ...

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