International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
l l l l l
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 2.7 V V µA mA nA V
BV CE.
Full PDF Text Transcription for IXGH24N60AU1 (Reference)
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IXGH24N60AU1. For precise diagrams, and layout, please refer to the original PDF.
HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi = 600 V = 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com V CES V CGR V GES V...
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= 48 A = 2.7 V = 275 ns Symbol www.DataSheet4U.com V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C l TO-247 SMD (24N60AU1S) G E C (TAB) TO-247 AD (24N60AU1) C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum Lead and Tab temperature for soldering 1.
IXGH24N60AU1 Datasheet
