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IXGH24N60BU1 - HiPerFAST IGBT

Key Features

  • G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB) VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD.
  • High frequency IGBT and antiparallel.
  • High current handling capability.
  • 3rd generation.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGH24N60B HiPerFAST IGBT
IXGH24N60A HiPerFAST IGBT
IXGH24N60AU1 HiPerFAST IGBT
IXGH24N60AU1S HiPerFAST IGBT
IXGH24N60C HiPerFAST IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ...