IXGH24N60BU1
IXGH24N60BU1 is HiPerFAST IGBT manufactured by IXYS.
Hi Per FASTTM IGBT with Diode
IXGH 24N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 48 A = 2.3 V = 80 ns
Symbol
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features
G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB)
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
TO-247 AD
- High frequency IGBT and antiparallel
- High current handling capability
- 3rd generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity FRED in one package
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque
1.13/10 Nm/lb.in. 6 g
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 2.3 V V µA m A n A V
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AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 µA, VGE = 0 V = 250 µA, VCE =...
