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IXGH24N60BU1 Datasheet Hiperfast IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: HiPerFASTTM IGBT with Diode IXGH 24N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 48 A = 2.3 V = 80 ns Symbol .. Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ...

Key Features

  • G = Gate E = Emitter G C E C = Collector TAB = Collector C (TAB) VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD.
  • High frequency IGBT and antiparallel.
  • High current handling capability.
  • 3rd generation.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXGH24N60B HiPerFAST IGBT
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IXGH24N60AU1 HiPerFAST IGBT
IXGH24N60AU1S HiPerFAST IGBT
IXGH24N60C HiPerFAST IGBT
IXGH24N60CD1 HiPerFAST IGBT
IXGH24N120C3 GenX3 1200V IGBT
IXGH24N170 High Voltage IGBT
IXGH24N50B HiPerFAST IGBT
IXGH20N120 IGBT

IXGH24N60BU1 Distributor