IXGN60N60 Key Features
- high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) for minimum on-stat
- easy to drive and to protect
IXGN60N60 is Ultra-Low VCE(sat) IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGN60N60C2 | IGBT |
| IXGN60N60C2D1 | IGBT |
| IXGN200N60 | HiPerFAST IGBT |
| IXGN200N60A | HiPerFAST IGBT |
| IXGN200N60B | IGBT |
Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E .. Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A W °C °C °C SOT-227B miniBLOC Ex G VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Ex C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter.