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IXGN60N60 - Ultra-Low VCE(sat) IGBT

Key Features

  • q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 300 g °C q q Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s q q q International standard package SOT-227B Aluminium nitride isolation - high power dissipation Isolation voltage 3000 V~ Very high current, fast switching IGBT Low VCE(sat) for minimum on-state conduction losses MOS Gate turn-on drive simplicity Low collector-to-case capacitance (< 50 pF) Low package ind.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 100 60 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C SOT-227B miniBLOC Ex G VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Ex C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter Features q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.