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IXGN60N60C2 - IGBT

Key Features

  • z International Standard Package miniBLOC z Aluminium Nitride Isolation - High Power Dissipation z Anti-Parallel Ultra Fast Diode z Isolation Voltage 3000 V~ z LCoowndVuCcEt(isoatn) foLrosMsiensimum On-State z MOS Gate Turn-on - Drive Simplicity z Low Collector-to-Case Capacitance (< 50 pF) z Low Package Inductance (< 5 nH) - Easy to Drive and to Protect.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGN60N60C2D1 IGBT
IXGN60N60 Ultra-Low VCE(sat) IGBT
IXGN200N60 HiPerFAST IGBT
IXGN200N60A HiPerFAST IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFASTTM IGBTs with Diode IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs VCES = IC110 = VCE(sat) trr ≤ = 600V 60A 2.5V 35ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped Inductive Load TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting Torque Terminal Connection Torque (M4) E 60C2 E 60C2D1 Maximum Ratings 600 600 V V ±20 V ±30 V 75 A 60 A 300 A ICM = 100 @ VCE ≤ 600 480 A V W -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.