* z International Standard Package miniBLOC z Aluminium Nitride Isolation - High Power Dissipation z Anti-Parallel Ultra Fast Diode z Isolation Voltage 3000 V~ z LCoowndVuCcEt(isoatn) foLrosMsiensimum On-State z MOS Gate Turn-on - Drive Simplicity z Low Collector-to-Case Capacitance (< 50 pF) z Low Pa
IXGN60N60C2 Datasheet (145.14 KB)
IXGN60N60C2
IXYS Corporation
145.14 KB
Igbt.
HiPerFASTTM IGBTs with Diode IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs VCES = IC110 = VCE(sat) trr ≤ = 600V 60A 2.5V 35ns Symbol VCE.
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