* International standard packages
* IGBT and anti-parallel FRED in one package
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie
IXGT28N60BD1 Datasheet (57.31 KB)
IXGT28N60BD1
IXYS Corporation
57.31 KB
Low vce(sat) igbt.
Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25.
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