* International standard package JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g
* Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (
IXTH16P20 Datasheet (79.63 KB)
IXTH16P20
IXYS Corporation
79.63 KB
Standard power mosfet.
Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 16P20 VDSS ID25 RDS(on) = -200 V = -16 A = 0.2.
📁 Related Datasheet
IXTH16P60P Power MOSFET (IXYS)
IXTH160N075T Power MOSFET (IXYS Corporation)
IXTH160N075T N-Channel MOSFET (INCHANGE)
IXTH160N10T Power MOSFET (IXYS Corporation)
IXTH160N10T N-Channel MOSFET (INCHANGE)
IXTH160N15T N-Channel MOSFET (INCHANGE)
IXTH160N15T Power MOSFET (IXYS)
IXTH16N10D2 Depletion Mode MOSFET (IXYS)
IXTH16N20D2 Depletion Mode MOSFET (IXYS)
IXTH102N15T Power MOSFET (IXYS)
