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IXTT1N100 Datasheet High-Voltage MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTT1N100 datasheet PDF. This datasheet also includes the IXTH1N100 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTH1N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Mounting torque (TO-247) TO-268 TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 1.5 A 6 A 1.5 A 6 mJ 200 mJ 3 V/ns 60 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 1.13/10 Nm/lb.in.

Key Features

  • Ÿ International standard packages Ÿ High voltage, Low RDS (on).