Datasheet Specifications
- Part number
- IXTT6N120
- Manufacturer
- IXYS Corporation
- File Size
- 655.75 KB
- Datasheet
- IXTT6N120_IXYSCorporation.pdf
- Description
- High Voltage Power MOSFET
Description
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A =.
Features
* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µIXTT6N120 Distributors
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