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IXTT69N30P - Power MOSFET

Key Features

  • z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

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Full PDF Text Transcription for IXTT69N30P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT69N30P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ...

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nt Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P) TO-268 TO-3P Maximum Ratings 300 V 300 V ± 20 V ± 30 V 69 A 200 A 69 A 1.5 J 15 V/ns 500 W -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4.0 g 5.

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