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IXTT6N120 - High Voltage Power MOSFET

Key Features

  • z International standard packages z Low RDS (on).

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Full PDF Text Transcription for IXTT6N120 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT6N120. For precise diagrams, and layout, please refer to the original PDF.

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.6 Ω Symbol VDSS VDGR...

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20 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.6 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 Maximum Ratings 1200 V 1200 V ±20 V ±30 V 6 A 24 A 6 A 25 mJ 500 mJ 5 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.

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