VUO35-06NO7 Datasheet | IXYS

Features q Package with screw terminals q Isolation voltage 3000 V~ q Planar passivated chips q Blocking voltage up to 1800 V q Low forward voltage drop q UL registered E 72873 Applications q Supplies for DC power equipment q Input rectifiers for PWM inverter q Battery DC power supplies q Field supply for DC motors Advantages q Easy to mount with two screws q Space and weight savings q Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Symbol I VF V T0 r T Rth JC R th JH Test Conditions V =V ; R RRM VR = VRRM; T VJ = 25°C TVJ = TVJM IF = 150 A; TVJ = 25°C For power-loss calculations only per diode; DC current per module per diode; DC current per module Characteristic Values £ 0.3 m A £ 5.0 m A £ 2.2 V 0.85 V 12 m W 4.2 K/W 0.7 K/W 4.8 K/W 0.8 K/W Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VUO 35 I2t .. Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode Fig. 3 I2t versus time (1-10 ms) IFSM: Crest value. t: duration per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved Fig. 5 Maximum forward current at case temperature Constants for Zth JC calculation: i Rthi (K/W) 1 0.194 2 0.556 3 0.45 4 3.0 ti (s) 0.024 0.07 3.25 9.3 Constants for Z calculation: th JK i Rthi...