VWM350-0075P Datasheet | IXYS

Features - MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode - package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2 0.25 0.2 450 60 170 60 170 320 200 1.1 90 0.51 1.6 3.3 m Ω 4 0.02 V m A m A µA n C n C n C ns ns ns ns V ns 0.26 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr Rth JC Rth JH VGS = 10 V; ID = ID80 VDS = 20 V; ID = 2 m A VDS = 75V; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 0.5 - VDSS; ID = 175A VGS= 10 V; VDS = 0.5 - VDSS; ID = 175 A; RG = 2.2 Ω (diode) IF = 175 A; VGS= 0 V (diode) IF = 40 A; -di/dt = 200 A/µs; VDS= 30 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor Gmb H Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 Ratings and characteristic values are per individual MOSFET VWM 350-0075P Module Symbol TVJ Tstg VISOL Md Symbol IISOL ≤ 1 m A; 50/60 Hz; t = 1 min Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+175 -40...+125 500 2 - 2.5 °C °C V~ Nm Equivalent Circuits for Simulation Thermal Response Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 80 g junction - case (typ.) Cth1 = 0.13 J/K; Rth1 = 0.08 K/W Cth2 = 0.22 J/K; Rth2 = 0.18 K/W Weight typ. Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor Gmb H Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 2-2 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax:...