3CD6D transistor equivalent, pnp transistor.
*Power amplifier
*Low speed switching
*Power regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
*DC Current Gain-
: hFE=10-180@IC= -2.5A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -2.5A
*Minimum Lot-to-Lot variations for robust device
performan.
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