Datasheet Details
| Part number | 3CD6D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.37 KB |
| Description | PNP Transistor |
| Datasheet |
 3CD6D Datasheet
|
|
|
| Part number | 3CD6D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.37 KB |
| Description | PNP Transistor |
| Datasheet |
3CD6D Datasheet
|
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min.) ·DC Current Gain- : hFE=10-180@IC= -2.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5V(Max)@ IC= -2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier ·Low speed switching ·Power regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=75℃ TJ Junction Temperature -5 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 3CD6D isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
isc Silicon PNP Power Transistor.
| Part Number | Description |
|---|---|
| 3CD3C | PNP Transistor |
| 3CD834 | PNP Transistor |
| 3CD9A | PNP Transistor |
| 3CD9B | PNP Transistor |
| 3CD9C | PNP Transistor |
| 3CD9D | PNP Transistor |
| 3CD9F | PNP Transistor |