INCHANGE Semiconductor
iwswwc.DaNtaS-hCeeth4Ua.conmnel Mosfet Transistor
isc Product Specification
8N60
·FEATURES
·Drain Current –ID= 7.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±20
V
V
ID Drain Current-Continuous
7.5 A
IDM Drain Current-Single Plused
30 A
PD Total Dissipation @TC=25℃
147 W
Tj Max. Operating Junction Temperature 150
℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.85 ℃/W
62.5 ℃/W
isc Website：www.iscsemi.cn
