8N60
FEATURES
- Drain Current
- ID= 7.5A@ TC=25℃
- Drain Source Voltage: VDSS= 600V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
- DESCRITION
- Designed for high efficiency switch mode power supply.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 7.5 30 147 150 -55~150 UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 0.85 62.5 UNIT ℃/W ℃/W isc Website：.iscsemi.cn
INCHANGE Semiconductor
.. isc N-Channel Mosfet Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V(BR)DSS
Drain-...
