Datasheet4U Logo Datasheet4U.com

12N60 - N-Channel MOSFET

Features

  • Drain Current.
  • ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V (Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
12N60 N-Channel Power MOSFET nELL
12N60 N-CHANNEL MOSFET CHONGQING PINGYANG
12N60 N-CHANNEL MOSFET UTC
12N60 600V N-Channel MOSFET GFD
12N60-C N-CHANNEL MOSFET UTC

Other Datasheets by Inchange Semiconductor

Part Number Description
12N65 N-Channel MOSFET Transistor
12N18 N-Channel Mosfet Transistor
12N20 N-Channel Mosfet Transistor
12N45 N-Channel Mosfet Transistor
12N45A N-Channel Mosfet Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A Tj Max.
Published: |