12N60 - N-Channel MOSFET

Features

Drain Current.
ID= 12A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V (Min).
Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

12N60 N-Channel MOSFET by Inchange Semiconductor - Datasheet Preview — Datasheet preview – 12N60

Datasheet Details

Part number	12N60
Manufacturer	Inchange Semiconductor
File Size	223.05 KB
Description	N-Channel MOSFET
Datasheet	12N60 Datasheet
Additional preview pages of the 12N60 datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A Tj Max.

Published: Jun 18, 2016 |