INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N65
·FEATURES
·Drain Current –ID= 12A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V (Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
±30
V
V
ID Drain Current-Continuous
12 A
IDM Drain Current-Single Plused
48 A
PD Total Dissipation @TC=25℃
225 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.56 ℃/W
62.5 ℃/W
isc website： www.iscsemi.com
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