12N65 - N-Channel MOSFET Transistor

Features

Drain Current.
ID= 12A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V (Min).
Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.

12N65 N-Channel MOSFET Transistor by Inchange Semiconductor - Datasheet Preview — Datasheet preview – 12N65

Datasheet Details

Part number	12N65
Manufacturer	Inchange Semiconductor
File Size	130.26 KB
Description	N-Channel MOSFET Transistor
Datasheet	12N65 Datasheet
Additional preview pages of the 12N65 datasheet.

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Full PDF Text Transcription

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 ±30 V V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A PD Total Dissipation @TC=25℃ 225 W Tj Max.

Published: Jun 18, 2016 |