Datasheet4U Logo Datasheet4U.com

12N65 - N-Channel MOSFET Transistor

Features

  • Drain Current.
  • ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V (Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
12N65 N-Channel Power MOSFET nELL
12N65 N-CHANNEL MOSFET CHONGQING PINGYANG
12N65 N-Channel MOSFET HAOHAI
12N65 N-CHANNEL POWER MOSFET Unisonic Technologies
12N65 650V N Channel Power MOSFET JINAN JINGHENG

Other Datasheets by Inchange Semiconductor

Part Number Description
12N60 N-Channel MOSFET
12N18 N-Channel Mosfet Transistor
12N20 N-Channel Mosfet Transistor
12N45 N-Channel Mosfet Transistor
12N45A N-Channel Mosfet Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 ±30 V V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A PD Total Dissipation @TC=25℃ 225 W Tj Max.
Published: |