2N2222 Datasheet | Inchange Semiconductor

DESCRIPTION - Collector Current- IC= 0.8A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) - plement to Type 2N2907 APPLICATIONS - Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc Website：.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10m A ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 150m A; IB= 15m A IC= 500m A; IB= 50m A IC= 150m A; IB= 15m A IC= 500m A; IB= 50m A VCB= 50V; IE=0 VEB= 5V; IC=0 h FE-1 DC Current Gain h...