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Inchange Semiconductor

2N2222 Datasheet Preview

2N2222 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current- IC= 0.8A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 30V(Min)
·Complement to Type 2N2907
APPLICATIONS
·Designed for general-purpose switching and linear
amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC Collector Current-Continuous
IBM Base Current-Peak
PC Collector Power Dissipation@TC=25
TJ Junction Temperature
Tstg Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
isc Product Specification
2N2222
VALUE
60
30
5
0.8
0.2
0.5
150
-65~150
UNIT
V
V
V
A
A
W
MAX
350
UNIT
K/W
isc Websitewww.iscsemi.cn




Inchange Semiconductor

2N2222 Datasheet Preview

2N2222 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N2222
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR) CEO
V(BR)EBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=10mA ; IB=0
IE=10μA ; IC=0
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 150mA; IB= 15mA
IC= 500mA; IB= 50mA
IC= 150mA; IB= 15mA
IC= 500mA; IB= 50mA
VCB= 50V; IE=0
VEB= 5V; IC=0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-3
DC Current Gain
hFE-4
DC Current Gain
hFE-5
DC Current Gain
fT Current Gain-Bandwidth Product
COB Output Capacitance
Switching Times
IC= 0.1mA ; VCE= 10V
IC= 1mA ; VCE= 10V
IC= 10mA ; VCE= 10V
IC= 150mA ; VCE= 10V
IC= 500mA ; VCE= 10V
IC= 20mA ; VCE= 20V;ftest= 100MHz
IE= 0 ; VCB= 10V; ftest= 1.0MHz
td Delay Time
tr Rise Time
tstg Storage Time
tf Fall Time
IC= 150mA; IB1= -IB2= 15mA
MIN MAX UNIT
30 V
5V
0.4 V
1.6 V
1.3 V
2.6 V
1.5 uA
50 nA
35
50
75
100 300
30
250 MHz
8 pF
10 ns
25 ns
200 ns
60 ns
isc Websitewww.iscsemi.cn


Part Number 2N2222
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
PDF Download

2N2222 Datasheet PDF






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