| Part number | 2N6052 |
|---|---|
| Datasheet | 2N6052-InchangeSemiconductor.pdf |
| File Size | 184.67 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
|
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·plement to type 2N6059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR | ON Semiconductor |
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2N6052 | PNP Darlington Power Silicon Transistor | VPT |
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2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N6052 | POWER COMPLEMENTARY SILICON TRANSISTORS | Comset Semiconductors |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6050 | Silicon PNP Power Transistors |
| 2N6051 | Silicon PNP Power Transistors |
| 2N6057 | Silicon NPN Power Transistors |
| 2N6040 | Silicon PNP Power Transistors |
| 2N6041 | Silicon PNP Power Transistors |
| 2N6042 | Silicon PNP Power Transistors |
| 2N6099 | Silicon NPN Power Transistors |
| 2N6211 | Silicon PNP Power Transistors |
| 2N6213 | Silicon PNP Power Transistor |
| 2N6235 | Silicon NPN Power Transistor |
